Shuttling of spin polarized electrons in molecular transistors

被引:3
|
作者
Ilinskaya, O. A. [1 ]
Kulinich, S. I. [1 ,2 ,3 ]
Kriye, I. V. [1 ,2 ,3 ,4 ]
Shekhter, R. I. [2 ]
Park, Y. W. [3 ]
Jonson, M. [2 ,5 ]
机构
[1] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, 47 Lenin Ave, UA-61103 Kharkov, Ukraine
[2] Univ Gothenburg, Dept Phys, SE-41296 Gothenburg, Sweden
[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[4] Kharkov Natl Univ, Dept Phys, UA-61077 Kharkov, Ukraine
[5] Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland
基金
新加坡国家研究基金会;
关键词
Single-electron shuttling; Molecular transistors; Spintronics; MAGNETORESISTANCE; SYSTEMS;
D O I
10.1016/j.synthmet.2015.11.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a C-60-based molecular transistor with magnetic (Ni) electrodes is discussed (Pasupathy et al. (2004) [7]). (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:83 / 87
页数:5
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