Zinc Oxide Nanorods Grown on Printed Circuit Board for Extended-Gate Field-Effect Transistor pH Sensor

Zinc oxide (ZnO) nanorods (NRs) were grown directly on printed circuit boards with a 35-mu m-thick copper layer using a seedless galvanic-cell hydrothermal process. The hexagonal structure of the synthesized ZnO NRs was observed by scanning electron microscopy. The microstructural characteristics of the as-grown ZnO NRs were investigated by x-ray diffraction analysis, revealing preferred (002) growth direction. Raman and photoluminescence spectra confirmed the high crystalline quality of the ZnO NRs. As-grown ZnO NRs were then grown for 7 h using the galvanic effect for use as the pH membrane of an extended-gate field-effect transistor pH sensor (pH-EGFET). The current-voltage characteristics showed sensitivity of 15.4 mV/pH and 0.26 (mu A)(1/2)/pH in the linear and saturated region, respectively. Due to their cost effectiveness, low-temperature processing, and ease of fabrication, such devices are potential candidates for use as flexible, low-cost, disposable biosensors.