Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

被引：4

作者：

Park, Kibyung ^{[1
]}

Lee, Younghwan ^{[1
]}

Im, Kyung Taek ^{[1
]}

Lee, June Young ^{[1
]}

Lim, Sangwoo ^{[1
]}

机构：

[1] Yonsei Univ, Dept Chem & Biomol Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

关键词：

Germanium; Self-assembled monolayer; Atomic layer deposition; Alkylation; Equivalent oxide thickness; TERMINATED GE(100) SURFACE; GERMANIUM SURFACES; GE(111); OXIDATION; FUNCTIONALIZATION; INTERFACES; NANOWIRES; SILICON;

D O I：

10.1016/j.tsf.2009.11.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 degrees C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4126 / 4130

页数：5

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