Control of polariton scattering in resonant-tunneling double-quantum-well semiconductor microcavities

被引：33

作者：

Christmann, Gabriel ^{[1
]}

Coulson, Christopher ^{[1
]}

Baumberg, Jeremy J. ^{[1
]}

Pelekanos, Nikolaos T. ^{[2
,3
]}

Hatzopoulos, Zacharias ^{[2
,3
]}

Tsintzos, Simeon I. ^{[2
,3
]}

Savvidis, Pavlos G. ^{[2
,3
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71110, Greece

[3] FORTH, Iraklion 71110, Greece

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

BOSE-EINSTEIN CONDENSATION; TEMPERATURE; AMPLIFIER; DOT;

D O I：

10.1103/PhysRevB.82.113308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic control of ultrafast optical amplification is achieved in specially designed semiconductor micro-cavities with double quantum well. The gain from parametric scattering of polaritons is selectively quenched by tuning the intracavity electric field to turn on and off interwell resonant tunneling. A > 90% reduction in optical gain is observed with only 100 mV change in applied bias. The strong exciton-photon coupling regime leads here to competition between the rate of Rabi coupling and of electronic tunneling between adjacent quantum wells.

引用

页数：4

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