A light spot scanner photo-current technique to measure surface recombination velocity of semiconductor

被引：0

作者：

Zhang, F ^{[1
]}

Chen, JL ^{[1
]}

Xu, CX ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Elect Power, Shanghai 200240, Peoples R China

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 & 2 | 2000年

关键词：

photo-current measurement; image method; surface recombination velocity; interface; point source; angle beveled mesa structure;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Depending on the image method and point source approximation method, a physic model was established, and the formula of photo-current versus surface recombination velocity was obtained. Thus, a light spot scanner photo-current (PC) measurement technique is set up to measure the interface properties of silicon p-n junction. Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon p-n junction protected by organic materials or inorganic passivation films could be measured. From the experiment results and the normalization results, the surface recombination velocities of silicon p-n junction under different conditions are obtained, and the results can be used to evaluate its interface property.

引用

页码：918 / 921

页数：4

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