Effect of damping constant on magnetic switching in spin torque driven perpendicular MRAM

被引:7
|
作者
Zhu, Xiaochun [1 ]
Zhu, Jian-Gang [1 ]
机构
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
关键词
damping constant; ferromagnetic resonance; magnetoresistive random access memory (MRAM); perpendicular MRAM; spin torque;
D O I
10.1109/TMAG.2007.892330
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a spin torque included dynamic micromagnetic modeling investigation on the perpendicular magnetoresistive random access memory design. A small inject current always generates a steady magnetization precession of the composite storage layer around perpendicular axis. For a given current density, the precession frequency is lower when the Gilbert damping constant of the perpendicular layer is higher. It is found that magnetization reversal of the perpendicular storage layer occurs when the lateral precession frequency reaches the ferromagnetic resonance condition. To reach the required precession frequency, a higher current density is required for a great value of damping constant of the perpendicular layer.
引用
收藏
页码:2349 / 2351
页数:3
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