Impact of Channel Implant Variation on RTN and Flicker Noise

被引：3
|
作者：
Raffel, Yannick [1 ]
Seidel, Konrad [1 ]
Pirro, Luca [2 ]
Lehmann, Steffen [2 ]
Hoffmann, Raik [1 ]
Olivo, Ricardo [1 ]
Kaempfe, Thomas [1 ]
Heitmann, Johannes [3 ]
机构：
[1] Fraunhofer IPMS, Fraunhofer CNT, Dresden, Germany
[2] GLOBALFOUNDRIES, GLOBALFOUNDRIES Dresden, Dresden, Germany
[3] Tech Univ Bergakad Freiberg, Freiberg, Germany
来源：
2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2020年
关键词：
Flicker-noise; RTN; FDSOI; doping-density; MOSFET;
D O I：
10.1109/EUROSOI-ULIS49407.2020.9365296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With different device doping options in fully depleted silicon-on-insulator (FDSOI) metaloxide semiconductor field effect transistor (MOSFET) channel and under different bias conditions the low frequency noise level can be manipulated and optimized We demonstrated a noise level dependence on different channel device doping options and a lowering of gate input voltage (SVG) with different back gate voltages (Vb) in n-type metal-oxide semiconductor (NMOS) and p-type metal-oxide semiconductor (PMOS) structures.
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页数：4
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