Linear polarization of photons produced by the electron plane channeling in a silicon crystal

被引：0

作者：

Denyak, V ^{[1
]}

Evseev, IG

Khvastunov, VM

Likhachev, VP

Paschuk, SA

Schelin, HR

机构：

[1] Kharkov Inst Phys & Technol, Natl Sci Ctr, UA-61108 Kharkov, Ukraine

[2] CEFET PR, Fed Ctr Technol Educ, BR-80230901 Curitiba, Parana, Brazil

[3] Univ Sao Paulo, Sao Paulo, Brazil

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2003年 / 33卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the results of the polarization and intensity measurements versus photon energy E-gamma = 5 - 35 MeV for the photon beam produced by the electron plane channeling with the energies 1.2 and 1.5 GeV in silicon crystals 500 mum and 290 mum thick along the (110) plane. The comparison with results of another research group and theoretical calculations indicate a qualitative agreement. The correlation between the shape of the radiation intensity spectrum and its polarization energy dependence is observed.

引用

页码：133 / 139

页数：7

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