Etching of GaN by microwave plasma of hydrogen

被引：7

作者：

Tiwari, Rajanish N. ^{[1
]}

Chang, Li ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 03期

关键词：

DECOMPOSITION; INN;

D O I：

10.1088/0268-1242/25/3/035010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H-2 plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.

引用

页数：6

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