Effects of semiconduction on electromechanical energy conversion in piezoelectrics

被引：77

作者：

Li, Peng ^{[1
]}

Jin, Feng ^{[2
]}

Yang, Jiashi ^{[3
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Human Settlements & Civil Engn, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Strength & Vibrat Mech Struct, Xian 710049, Shaanxi, Peoples R China

[3] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA

来源：

SMART MATERIALS AND STRUCTURES | 2015年 / 24卷 / 02期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

piezoelectric semiconductors; thickness-extensional vibration; output electrical power; energy conversion efficiency; THICKNESS VIBRATIONS; AMPLIFICATION; NANOWIRES; PLATE; NANOGENERATOR; PERFORMANCE; WAVES;

D O I：

10.1088/0964-1726/24/2/025021

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We study the effect of semiconduction on mechanical-to-electrical energy conversion through a theoretical analysis on the thickness-extensional vibration of a piezoelectric semiconductor plate driven mechanically. An analytical solution is obtained. A ZnO plate is used as a numerical example. Results show that both the electrical output power and the energy conversion efficiency are sensitive to semiconduction at a moderate carrier density of 1015 m(-3), and that the effect of the dissipation due to semiconduction can be comparable to the effect of material damping when the material quality factor is in the usual range of 10(2)-10(3).

引用

页数：7

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