Influence of pulsed laser radiation on the morphology and photoelectric properties of InSb crystals

被引：2
|
作者：
Gnatyuk, VA
Gorodnychenko, OS
机构：
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
[2] Shevchenko Natl Univ, UA-252017 Kiev, Ukraine
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 04期
关键词：
Energy Density; Laser Radiation; Electromagnetism; InSb; Ruby;
D O I：
10.1134/1.1568457
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Modifications in the surface morphology and photoelectric properties of InSb crystals irradiated with nanosecond pulses of ruby laser are studied. The threshold energy density corresponding to the onset of surface melting was determined to be 0.14 J/cm(2). Laser-induced changes in the spectra and photoconduction kinetics are analyzed. It is demonstrated that the irradiation of InSb crystals with ruby laser pulses within a certain range of energy densities slows down the surface recombination, increases the nonequilibrium carrier lifetime, and, as a consequence, enhances the photosensitivity of crystals. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：396 / 398
页数：3
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