THz frequency receiver instrumentation for Herschel's heterodyne instrument for far infrared (HIFI)

被引:8
|
作者
Pearson, JC [1 ]
Mehdi, I [1 ]
Schlecht, E [1 ]
Maiwald, F [1 ]
Maestrini, A [1 ]
Gill, J [1 ]
Martin, S [1 ]
Pukala, D [1 ]
Ward, J [1 ]
Kawamura, J [1 ]
McGrath, WR [1 ]
Hatch, WA [1 ]
Harding, D [1 ]
Leduc, HG [1 ]
Stern, JA [1 ]
Bumble, B [1 ]
Samoska, L [1 ]
Gaier, T [1 ]
Ferber, R [1 ]
Miller, D [1 ]
Karpov, A [1 ]
Zmuidzinas, J [1 ]
Phillips, T [1 ]
Erickson, N [1 ]
Swift, J [1 ]
Chung, YH [1 ]
Lai, R [1 ]
Wang, H [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
heterodyne; receiver; submillimeter; multiplier; mixer; LNA; local oscillator; MMIC; THz;
D O I
10.1117/12.461757
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. Two fixed tuned local oscillator sub-bands are derived from a common synthesizer to provide the front-end frequency coverage for each channel. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration's Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the highest frequency (1650-4910 GHz) HEB mixers, local oscillators for the three highest frequency receivers as well as W-band power amplifiers, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.
引用
收藏
页码:650 / 661
页数:12
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