Gas cluster ion beam irradiation for wafer bonding

被引：0
|
作者：
Toyoda, Noriaki [1 ]
Sasaki, Tomoya [1 ]
Ikcda, Shota [1 ]
Yamada, Isao [1 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.
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页码：5 / 5
页数：1
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