New CMOS linear voltage-controlled floating positive and negative resistances

New CMOS linear voltage-controlled floating positive resistance (VCFPR) and voltage-controlled floating negative resistance (VCFNR) circuits are presented, each employing sixteen MOSFETs operating in strong inverted saturation region. The workability of both the proposed circuits has been confirmed by SPICE simulations using 0.18 mu m CMOS technology parameters with circuits biased from DC power supply voltage of +/- 1.5 V. Both the circuits are free from the body-effect and realise a variable resistance over the range of 2.53 k Omega to 0.375 k Omega for the VCFPR and -2.57 k Omega to -0.389 k Omega for the VCFNR by varying the control voltage from +/- 0.75 to +/- 1.5 V. The magnitude of all the four Y-parameters of both the circuits remains invariant up to 10 MHz with a maximum error -3.5 degrees in phase in case of the VCFPR and -6.7 degrees in case of the VCFNR. The power consumption was found to be between 0.26 and 19.4 mW for the VCFPR as well as the VCFNR while the % THD was in the range of 0.013-1.91% for the VCFPR and 0.01-1.63% for the VCFNR. The applications of the VCFPR in realising a VCO and that of the VCFNR in loss-cancellation of a simulated lossy inductor have been presented.