k∥-resolved electronic structure of quasi-free 2-dimensional HfS2 clusters

Employing van der Waals epitaxy we grow quasi-free 2-dimensional clusters of layered materials. The weak coupling between the layers enables the clusters to reveal their intrinsic properties undisturbed by the underlying substrate. Their orientations being well ordered allow k(parallel to)-resolved measurements. Applying angle-resolved photoemission in combination with scanning tunneling microscopy to the same samples allows to study the evolution of the electronic structure with increasing cluster size. For 2D HfS2 clusters grown on WSe2 we demonstrate that k(parallel to) dispersion already occurs for cluster diameters of approximate to 100 nm.