Accurate Calculation of Quantum Kinetic Energy of Single-electron Transistor at Room Temperature

被引：0
|
作者：
Chen, Xiaobao [1 ]
Xing, Zuocheng [1 ]
Sui, Bingcai [1 ]
机构：
[1] Natl Univ Def Technol, Inst Microelect, Sch Comp, Changsha 410073, Hunan, Peoples R China
来源：
2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a novel analytical model for semiconductor single-electron transistor (SET) with concrete size coulomb island at room temperature. The number of electrons in island of SET is analyzed when it is odd number or even number, respectively, then a uniform calculation model is gained for the first time. Based on the model, the I-V characteristics such as coulomb oscillation and coulomb blockade of SET with concrete size coulomb island are simulated and analyzed. The analysis of the experiment results indicates that this model accords with reality and will be very useful for estimating the realistic performance of the SET circuits at room temperature.
引用
收藏
页码：993 / 996
页数：4
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