Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state

被引：7
|
作者：
Senturk, E. [1 ]
Tumbek, L.
Mikailov, F. A.
Saiehli, F.
机构：
[1] Sakarya Univ, Dept Phys, TR-54100 Sakarya, Turkey
[2] Gebze Inst Technol, Dept Phys, TR-41400 Kocaeli, Turkey
[3] Istanbul Tech Univ, Dept Phys, TR-80626 Istanbul, Turkey
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2007年 / 42卷 / 06期
关键词：
dielectric constant; layered system; relaxation; chaotic state;
D O I：
10.1002/crat.200610875
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS, is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：626 / 630
页数：5
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