Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE

被引：16

作者：

Komaki, Hironori

Nakamura, Teruyuki

Katayama, Ryuji

Onabe, Kentaro

Ozeki, Masashi

Ikari, Tetsuo

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa Shi, Kashiwa, Chiba 2778561, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

photoluminescence; surface structure; X-ray diffraction; molecular beam epitaxy; InGaN;

D O I：

10.1016/j.jcrysgro.2006.11.123

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth temperature dependence of In-rich InGaN growth properties for each Ga/(Ga +In) supply ratio by radio-frequency plasma assisted molecular beam epitaxy was investigated. The luminescence property of In-rich InGaN films up to 20% of Ga improved compared with that of InN because their growth temperatures could be set at high and high purity InGaN films were obtained. This effect can be partly interpreted as a result of the larger bond strength of Ga-N than that of In-N. However, the InGaN films tend to be Ga-rich in case of relatively high growth temperatures. Also, InGaN dot-like structures at intermediate composition were grown as a result of the combination effect of phase separation due to the immiscibility of GaN into InN and local strain due to lattice mismatch between InGaN and underlying GaN buffer layer. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：473 / 477

页数：5

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