Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

被引：6
|
作者：
Kelleher, C
Ginige, R
Corbett, B
Clarke, G
机构：
[1] NMRC, Cork, Ireland
[2] IQE, Cardiff CF3 OEG, S Glam, Wales
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期
关键词：
D O I：
10.1063/1.1835537
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics.
引用
收藏
页码：6033 / 6035
页数：3
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