Estimation of Exciton Confinement in III-Nitride Quantum Wires

被引:0
|
作者
Islam, Md. Rakibul [1 ]
Hasan, Md. Soyaeb [1 ]
Islam, Md. Rafiqul [1 ]
机构
[1] KUET, Dept Elect & Elect Engn EEE, Khulna 9203, Bangladesh
关键词
exciton; quantum wire; composition; confinement; ABSORPTION; EMISSION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The optical properties of one dimensional (1D) structures are dominated by the excitonic behaviour which are formed by optical absorption. The excitonic properties in IIInitride based cylindrical quantum wires (QWRs) have been investigated theoretically. The confinement of the electron and the hole is subjected for the peculiarities of the exciton in a QWR where confinement of the particles can be governed through the size and shape of the QWR as well as through the selection of structure and impediment materials to produce various band offsets. In this paper, it has been traced the energy levels and wave functions for confined electrons and holes from numerical solution of Schrodinger-like equations in the effective mass approximation. Finally, the energy of confined exciton have been calculated from the above result. For the different composition in InGaN/GaN, AlGaN/GaN, InAlN/AlN based cylindrical QWRs, the excitonic behaviour have been investigated individually and the combined effects have also been pursued, where considering radius of the wire within the range of 30nm to 70nm.
引用
收藏
页码:311 / 313
页数:3
相关论文
共 50 条
  • [1] A Postsynthesis Decomposition Strategy for Group III-Nitride Quantum Wires
    Brockway, Lance
    Pendyala, Chandrashekhar
    Jasinski, Jacek
    Sunkara, Mahendra K.
    Vaddiraju, Sreeram
    CRYSTAL GROWTH & DESIGN, 2011, 11 (10) : 4559 - 4564
  • [2] III-nitride quantum devices - Microphotonics
    Jiang, HX
    Lin, JY
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2003, 28 (02) : 131 - 183
  • [3] Exciton confinement in InGaN/GaN cylindrical quantum wires
    Caetano, EWS
    Freire, VN
    Farias, GA
    da Silva, EF
    BRAZILIAN JOURNAL OF PHYSICS, 2004, 34 (2B) : 702 - 704
  • [4] Polarization of emission from non-polar III-nitride quantum wells: the influence of confinement
    Arora, Ashish
    Ghosh, Sandip
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (04)
  • [5] Simulation of Water Photo Electrolysis with III-Nitride Semiconductor Nano Wires
    Witzigmann, Bernd
    Bettenhausen, Maximilian
    Mewes, Marvin
    Fuele, Heiko
    Roemer, Friedhard
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXII, 2014, 8980
  • [6] Group III-nitride based hetero and quantum structures
    Monemar, B
    Pozina, G
    PROGRESS IN QUANTUM ELECTRONICS, 2000, 24 (06) : 239 - 290
  • [7] A review of III-nitride research at the Center for Quantum Devices
    Razeghi, M.
    McClintock, R.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 3067 - 3074
  • [8] III-nitride quantum dots as single photon emitters
    Holmes, Mark J.
    Arita, M.
    Arakawa, Y.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (03)
  • [9] Electronic properties of III-nitride materials and basics of III-nitride FETs
    Asbeck, Peter M.
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : 1 - 40
  • [10] Toward scalable III-nitride quantum dot structures for quantum photonics
    Ku, Pei-Cheng
    Sarwar, Tuba
    Demory, Brandon
    Teng, Chu-Hsiang
    SEMICONDUCTOR QUANTUM SCIENCE AND TECHNOLOGY, 2020, 105 : 1 - 27