Ion beam mixing at crystalline and amorphous Fe/Si interfaces

被引：0

作者：

Milinovic, V. ^{[1
]}

Zhang, K. ^{[1
]}

Bibic, N. ^{[1
,2
]}

Leib, K. P. ^{[1
]}

Milosavljevic, M. ^{[2
]}

Sahoo, P. K. ^{[1
,3
]}

机构：

[1] Univ Gottingen, Inst Phys 2, Busgenweg 2, D-37077 Gottingen, Germany

[2] Vinca Inst Nucl Sci, Belgrade, Serbia

[3] Katholieke Univ Leuven, B-3000 Louvain, Belgium

来源：

PHYSICS OF IONIZED GASES | 2006年 / 876卷

关键词：

ion beam mixing; swift heavy ions; silicides;

D O I：

暂无

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.

引用

页码：209 / +

页数：3

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