Design of X-band solid state power amplifier

被引：0
|
作者：
Lv, Bo [1 ]
Zhang, Xiao-Fa [1 ]
Yuan, Nai-Chang [1 ]
机构：
[1] Natl Univ Def Technol, Sch Elect Sci & Engn, Microwave Ctr, Changsha 410073, HuNan, Peoples R China
来源：
PROCEEDINGS OF 2006 CIE INTERNATIONAL CONFERENCE ON RADAR, VOLS 1 AND 2 | 2006年
关键词：
power amplifier; solid state circuit; bias circuit;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, Design theory for the X-band power amplifier is introduced firstly, and CAD method is used to design the bias circuit. Precautions in the installation of GaAs FET are given. Power supply protection circuit is designed to satisfy the turn-on and turn-off sequences. At the end test results are presented.
引用
收藏
页码：417 / +
页数：2
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