Enhancement of critical current density of YBa2Cu3O7-δ thin films by self-assembly of Y2O3 nanoparticulates

被引:21
|
作者
Viswanathan, S. K.
Gapud, A. A.
Varela, M.
Abiade, J. T.
Christen, D. K.
Pennycook, S. J.
Kumar, D. [1 ]
机构
[1] N Carolina Agr & Tech State Univ, Dept Mech & Chem Engn, Greensboro, NC 27411 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
superconductivity; nanodots; critical current density; flux pinning;
D O I
10.1016/j.tsf.2006.11.120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
YBa2Cu3O7-delta (YBCO) thin films, possessing high critical current density (J(c)), have been synthesized by embedding a homogeneous array of Y2O3 non-superconducting nanoclusters/nanoparticles using a pulsed laser deposition technique. The size, interparticle spacing, and density of Y2O3 nanoparticles in YBCO thin films were tailored by varying the number of laser pulses in order to determine the optimum size for effective immobilization of vortices. Scanning transmission electron microscopy with atomic number contrast and X-ray diffraction techniques were used to determine the size and structure of the nanoparticles. Both techniques indicate that the Y2O3 Particles are epitaxial with respect to the surrounding YBCO matrix. The information about pinning of vortices by the nanoparticles was obtained by investigating the behavior of critical current density as a function of temperature and applied field, which in turn determines the vortex density in the sample. The superconducting transition temperature (T-c) of YBCO films with the inclusion of nanoparticles was observed to remain almost the same or decrease marginally (1-2 K) with respect to T-c of pure YBCO films deposited under identical conditions. However, J(c)s of YBCO films embedded with self-assembled nanoparticles were found to be significantly higher than that of pure YBCO films. The J(c) enhancement was up to five times in high magnetic field, which is a key requirement for practical application of high-T-c materials. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:6452 / 6455
页数:4
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