Anomalous Enhancement of the Thermoelectric Power in Gallium-Doped p-(Bi1-xSbx)2Te3 Single Crystals

被引：3
|
作者：
Kulbachinskii, V. A. [1 ]
Kytin, V. G. [1 ]
Tarasov, P. M. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
来源：
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2010年 / 110卷 / 04期
关键词：
ENERGY-SPECTRUM; INDIUM ATOMS; STATES; TRANSPORT; BI2TE3;
D O I：
10.1134/S1063776110040096
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of gallium on the temperature dependences (5 K <= T <= 300 K) of Seebeck coefficient alpha, electrical conductivity sigma, thermal conductivity k, and thermoelectric efficiency Z of mixed p-(Bi0.5Sb0.5)(2)Te-3 semiconductor single crystals is studied. The hole concentration decreases upon gallium doping; that is, gallium causes a donor effect. The Seebeck coefficient increases anomalously, i.e., much higher than it should be at the detected decrease in the hole concentration. This leads to an enhancement of the thermoelectric power. The observed changes in the Seebeck coefficient indicate a noticeable gallium-induced change in the density of states in the valence band.
引用
收藏
页码：618 / 621
页数：4
相关论文
共 50 条
  • [1] Anomalous enhancement of the thermoelectric power in gallium-doped p-(Bi1 − xSbx)2Te3 single crystals
    V. A. Kulbachinskiĭ
    V. G. Kytin
    P. M. Tarasov
    Journal of Experimental and Theoretical Physics, 2010, 110 : 618 - 621
  • [2] Fermi surface and thermoelectric power of (Bi1-xSbx)2Te3 single crystals doped by Ag, Sn, Ga
    Kulbachinskii, V. A.
    Kytin, A. V. G.
    Tarasov, P. M.
    ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS, 2006, : 459 - +
  • [3] CONSIDERATION TO THE NERNST-ETTINGSHAUSEN (NE) EFFECT IN THERMOELECTRIC P-(BI1-XSBX)2TE3 SINGLE-CRYSTALS
    STORDEUR, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (02): : K145 - K148
  • [4] THE THERMOELECTRIC FIGURE OF MERIT IN THE MIXED-CRYSTAL SYSTEM P-(BI1-XSBX)2TE3
    STORDEUR, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 161 (02): : 831 - 835
  • [5] INVESTIGATION OF THE VALENCE BAND-STRUCTURE OF THERMOELECTRIC (BI1-XSBX)2TE3 SINGLE-CRYSTALS
    STORDEUR, M
    STOLZER, M
    SOBOTTA, H
    RIEDE, V
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 150 (01): : 165 - 176
  • [6] IR TRANSMISSION INVESTIGATIONS OF (BI1-XSBX)2TE3 SINGLE-CRYSTALS
    STOLZER, M
    STORDEUR, M
    SOBOTTA, H
    RIEDE, V
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 138 (01): : 259 - 266
  • [7] Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoelectric thin films
    Del Frari, D
    Diliberto, S
    Stein, N
    Boulanger, C
    Lecuire, JM
    JOURNAL OF APPLIED ELECTROCHEMISTRY, 2006, 36 (04) : 449 - 454
  • [8] Pulsed electrodeposition of (Bi1-xSbx) 2Te3 thermoelectric thin films
    Del Frari, Doriane
    Diliberto, Sebastien
    Stein, Nicolas
    Boulanger, Clotilde
    Lecuire, Jean-Marie
    Journal of Applied Electrochemistry, 2006, 36 (04): : 449 - 454
  • [9] Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoelectric thin films
    Doriane Del Frari
    Sebastien Diliberto
    Nicolas Stein
    Clotilde Boulanger
    Jean-Marie Lecuire
    Journal of Applied Electrochemistry, 2006, 36 : 449 - 454
  • [10] Influence of Sn on galvanomagnetic properties of layered p-(Bi1-xSbx)2Te3 semiconductors
    Kulbachinskii, VA
    Kaminsky, AY
    Kindo, K
    Narumi, Y
    Suga, K
    Kawasaki, S
    Sasaki, M
    Miyajima, N
    Wu, GR
    Lostak, P
    Hajek, P
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (03): : 1467 - 1480
12345