Effects of natural and electrochemical oxidation processes on acoustic waves in porous silicon films

被引:9
|
作者
Fan, HJ
Kuok, MH [1 ]
Ng, SC
Lim, HS
Liu, NN
Boukherroub, R
Lockwood, DJ
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[2] Ecole Polytech, F-91128 Palaiseau, France
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.1583148
中图分类号
O59 [应用物理学];
学科分类号
摘要
Brillouin scattering has been performed to study the effects of natural and electrochemical oxidation on the surface and bulk acoustic mode properties of porous silicon films. The acoustic mode frequencies are observed to decrease with increasing oxidation time and this is attributed to the progressive transformation of silicon-silicon bonds on the inner pore walls into SiO2. The dependence of the surface and bulk acoustic mode frequencies on the natural oxidation time allows the evaluation of these wave frequencies for a porous-SiO2 glass film, and hence the estimation of its bulk modulus. Both Brillouin and Raman data confirm the expectation that oxidation leads to a reduction in silicon nanoparticle size, and provide a correlation between the redsifted acoustic mode frequency and the oxidation period. (C) 2003 American Institute of Physics.
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收藏
页码:1243 / 1247
页数:5
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