ANOMALOUS CAPACITANCE OF GaN-BASED SCHOTTKY DIODES

被引：1

作者：

Chu Kai-Hui ^{[1
]}

Zhang Wen-Jing ^{[1
]}

Xu Jin-Tong ^{[1
]}

Li Xiang-Yang ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2010年 / 29卷 / 03期

基金：

中国国家自然科学基金;

关键词：

capacitance-voltage characteristic; Schottky diode; GaN-based material;

D O I：

10.3724/SP.J.1010.2010.00161

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The capacitance-voltage (C-V) measurements of GaN-based Schottky diodes were carried out in the frequency range of 0.3 similar to 1.5MHz. Anomalous peaks and negative value of capacitance were observed in the C-V plots of Au/i-GaN Schottky diodes under forward bias, while neither of them was seen in the plots of Au/i-Al0.45Ga0.55N Schottky diodes. Based on the parameters extracted from the current-voltage (I-V) and C-V plots of GaN and Al0.45Ga0.55N Schottky diodes, the peak and negative capacitance are ascribed to the capture and loss of interface charges. These processes are greatly suppressed when there exists a huge series resistance in the diode.

引用

页码：161 / 166

页数：6

共 15 条

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