High-Power Optically Pumped Semiconductor Laser at 1040 nm

被引：70

作者：

Wang, Tsuei-Lian ^{[1
]}

Kaneda, Yushi ^{[1
]}

Yarborough, J. M. ^{[1
]}

Hader, Joerg ^{[1
]}

Moloney, Jerome V. ^{[1
]}

Chernikov, Alexej ^{[2
,3
]}

Chatterjee, Sangam ^{[2
,3
]}

Koch, Stephan W. ^{[2
,3
]}

Kunert, Bernardette ^{[2
,3
]}

Stolz, Wolfgang ^{[2
,3
]}

机构：

[1] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 09期

关键词：

Micro-cavity resonance; optically pumped semiconductor laser (OPSL); power scaling; MODE;

D O I：

10.1109/LPT.2010.2043731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate near-diffraction limited (M(2) approximate to 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.

引用

页码：661 / 663

页数：3

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