The growth of Pb nanocrystals on Si(111)7 x 7: Quantum size effects

被引：4

作者：

Jeffrey, C. A.

Feng, R.

Conrad, E. H.

Miceli, P. F. ^{[1
]}

Kim, C.

Hupalo, M.

Tringides, M. C.

Ryan, P. J.

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[3] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[4] Kyung Hee Univ, Res Inst Basic Sci, Seoul 130701, South Korea

[5] Iowa State Univ, Dept Phys, Ames Lab USDOE, Ames, IA 50011 USA

[6] Argonne Natl Lab, MUCAT, Adv Photon Source, Argonne, IL 60439 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 41卷 / 2-3期

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

Pb; Si; nanocrystals; X-ray scattering;

D O I：

10.1016/j.spmi.2006.10.007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface X-ray scattering and scanning-tunneling microscopy experiments, performed in situ, are used to investigate the influence of quantum size effects on the growth of Pb on the Si (111)7 x 7 surface. It is demonstrated that the structure of Pb islands and the associated wetting layer are consistent with the effects of quantum confinement. Moreover, these effects lead to novel behavior for the coarsening evolution of the Pb islands. For example, Ostwald ripening is not observed due to a breakdown of the classical Gibbs-Thomson effect. An unanticipated strong dependence on the deposition flux rate is found and we measure island decay times that are orders of magnitude faster than predicted. These results have important implications for understanding and controlling the growth of nanostructures. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：168 / 177

页数：10

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