Negative differential thermal conductance in a borophane normal metal-superconductor junction

被引:7
|
作者
Zare, Moslem [1 ]
机构
[1] Univ Yasuj, Dept Phys, Yasuj 75914353, Iran
来源
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2019年 / 32卷 / 11期
关键词
borophane; Andreev conductance; negative differential thermal conductance; normal metal/superconductor (NS) junction; Blonder-Tinkham-Klapwijk; 2-DIMENSIONAL BORON; ANDREEV REFLECTION; CONDUCTIVITY; TRANSPORT; STATES;
D O I
10.1088/1361-6668/ab3caf
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the charge and heat transport in a normal metal/superconductor (NS) junction of the tilted anisotropic Dirac cone material borophane, using the extended Blonder-Tinkham-Klapwijk formalism. In spite of the large mismatch in the Fermi wave vector of the normal metal and superconductor sides of the borophane NS junction, the electron-hole conversion happens with unit probability at normal incidences. Furthermore, in the heavily doped superconducting regime, for heavily doped normal borophane, the electron-hole conversion happens with unit probability, at almost any incident angle. Finding the dependence of the differential Andreev conductance on the Fermi energy and excitation energy gives us a handle to distinguish specular from retro Andreev reflection. We numerically find that, independent of the Fermi energy, the temperature dependence of the differential thermal conductance in borophane can be modelled as an inverse Gaussian function, reflecting the d-wave symmetry of the borophane superconductor. We propose a scheme for achieving negative differential thermal conductance, as a key building block of thermal circuits, at intermediate Fermi energies. Our findings will have potential applications in developing borophane-based thermal management and signal manipulation mesoscopic structures such as heat transistors, heat diodes, and thermal logic gates.
引用
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页数:11
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