Anomalous Hall effect in Pb1-x-ySnyMnxTe and Sn1-xMnxTe semimagnetic semiconductors

The temperature and magnetic field dependence of anomalous Hall effect (AHE), magnetization, and electric conductivity of Pb1-x-ySnyMnxTe and Sn1-xMnxTe semimagnetic semiconductors with 0.04 less than or equal to x less than or equal to 0.16 were experimentally studied over the range of carrier concentration 4.4 x 10(20) less than or equal to p less than or equal to 3.0 x 10(21) cm(-3). We present a consistent phenomenological analysis of all the experimental data taking into account the temperature dependence of the magnetization and the electric conductivity of PbSnMnTe and SnMnTe, yielding microscopic parameter characterizing the contributions of different scattering mechanisms to the AHE. This analysis indicates the important role of the AHE mechanism involving scattering on metal vacancies and the action of the spin-orbit coupling in the PbSnMnTe and SnMnTe crystals. (C) 1997 Elsevier Science B.V. All rights reserved.