A Single-Chip 36-38 GHz 4-Element Transmit/Receive Phased-Array with 5-bit Amplitude and Phase Control

被引:8
|
作者
Kim, Jeong-Geun [1 ]
Kang, Dong-Woo [2 ]
Min, Byung-Wook [3 ]
Rebeiz, Gabriel M. [2 ]
机构
[1] Kwangwoon Univ, Seoul 139701, South Korea
[2] Univ Calif San Diego, La Jolla, CA 92093 USA
[3] Qualcomm Inc, Santa Clara, CA 95051 USA
关键词
SiGe BiCMOS; T/R module; phased array; phase shifter; variable gain amplifier; BAND;
D O I
10.1109/MWSYM.2009.5165758
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 4-element 36-38 GHz SiGe BiCMOS phased array capable of both transmit and receive operation with 5-bit phase and amplitude control is presented. The design is based on an All-RF approach and results in very small chip area and low power consumption. The array results in a measured average gain of similar to 0 dB per channel, a noise figure of 8-9 dB, P1dB of -16 dBm, and output P1dB of +4 dBm over an instantaneous bandwidth of 2 GHz. The array consumes 171 and 142 mW in the Tx and Rx modes from 1.8 V, and occupies an area of 2.0 x 2.02 mm(2). To our knowledge, this is the smallest and lowest power consumption on-chip Ka-Band phased-array to-date.
引用
收藏
页码:561 / +
页数:2
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