Effect of Gd3+ doping on structural and optical properties of ZnO nanocrystals

被引:27
|
作者
Mithal, Deepika [1 ]
Kundu, Tapanendu [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
关键词
Nanocrystals; Semiconductor quantum dots; Optical properties; Photoluminescence; Defects; QUANTUM DOTS; PHOTOLUMINESCENCE; NANOSTRUCTURES; LUMINESCENCE;
D O I
10.1016/j.solidstatesciences.2017.04.006
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
To investigate the effect of rare earth ions on the excitation energy redistribution between the UV and visible photoluminescence, the Gd3+ doped ZnO nanocrystals prepared through Sol-Gel method were studied. Different structural characterizations and spectroscopic studies were carried out to establish a correlation between the structural effect and the photoluminescence. Our study indicates that the incorporation of Gd3+ in ZnO nanocrystals prepared through this synthesis takes place predominantly on the surface up to 0.18 mole fraction of Gd3+. This is manifested by the observed lattice contraction due to the presence of Gd3+ on the surface. This structural defect introduces various defects that modifies the photoluminescence properties. For these modifications in crystal system, the A(1) symmetry phonon modes of wurtzite structure are found to be gradually more Raman active than the other modes as the Gd3+ concentration is increased while the E modes are suppressed. These doping induced modification of phonon spectrum strongly influences the exciton phonon coupling and thereby the photophysical properties. Resulting crystal imperfections strongly enhance the defect band luminescence. It is shown that energy transfer from selectively excited Gd3+ centers to surface states can be effectively exploited for the sensitization of defect band luminescence in various fields such as bio imaging, light emitting devices etc. (C) 2017 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:47 / 54
页数:8
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