Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

被引：44

作者：

Macdonald, D ^{[1
]}

Cuevas, A ^{[1
]}

Kinomura, A ^{[1
]}

Nakano, Y ^{[1
]}

机构：

[1] Australian Natl Univ, Fac Engn & Informat Technol, Dept Engn, Canberra, ACT 0200, Australia

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190514

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.

引用

页码：285 / 288

页数：4

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