Purification of metallurgical-grade silicon using Si-Sn alloy in presence of Hf, Zr, or Ti

被引：15

作者：

Lei, Yun ^{[1
,2
]}

Ma, Wenhui ^{[1
,2
]}

Wu, Jijun ^{[2
]}

Wei, Kuixian ^{[2
]}

Lv, Guoqiang ^{[1
]}

Li, Shaoyuan ^{[2
]}

Morita, Kazuki ^{[3
]}

机构：

[1] Kunming Univ Sci & Technol, State Key Lab Complex Nonferrous Met Resources Cl, Kunming 650093, Yunnan, Peoples R China

[2] Kunming Univ Sci & Technol, Natl Engn Lab Vacuum Met, Kunming 650093, Yunnan, Peoples R China

[3] Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 88卷

基金：

中国国家自然科学基金;

关键词：

Si-Sn alloy; Si purification; Additive; Impurity; Intermetallic; Electron probe microanalysis; SOLVENT REFINING PROCESS; DIRECTIONAL SOLIDIFICATION; BORON REMOVAL; B REMOVAL; AL ALLOY; MELT; IMPURITIES; SEPARATION; SYSTEM; CALCIUM;

D O I：

10.1016/j.mssp.2018.07.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hf, Zr, or Ti was employed as additive to enhance removal of the main impurities from metallurgical-grade Si (MG-Si) during the Si-Sn alloy refining process. The microstructure of Si-Sn alloy without/with Zr, Hf, or Ti was observed and analyzed by electron probe microanalysis (EPMA) to investigate the distribution of impurities. Compositions of intermetallic phases precipitated in Sn or among the grain boundaries of Si were quantitatively analyzed using EPMA. The mechanisms of their formation and the removal of impurities are discussed. The results of Si refining showed that the addition of Hf or Zr slightly enhanced the removal of Al. The high refining temperature in the Si-Sn alloy refining process was responsible for the low extraction of B. Most of Zr, Hf, or Ti was removed simultaneously with other impurities during the Si-Sn alloy refining process.

引用

页码：97 / 102

页数：6

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