A BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy From-40 °C to 125 °C

被引：25

作者：

Huang, Zhenyan ^{[1
]}

Tang, Zhong ^{[1
,2
]}

Yu, Xiao-Peng ^{[1
]}

Shi, Zheng ^{[1
]}

Lin, Ling ^{[3
]}

Tan, Nick Nianxiong ^{[1
]}

机构：

[1] Zhejiang Univ, Inst VLSI Design, Hangzhou 310027, Peoples R China

[2] Delft Univ Technol, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands

[3] Vango Technol Inc, Dept Analog IC Design, Hangzhou 310053, Zhejiang, Peoples R China

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2021年 / 68卷 / 08期

关键词：

CMOS temperature sensor; duty-cycle; BJT; low relative inaccuracy; KC-DEM; -55-DEGREES-C;

D O I：

10.1109/TCSII.2021.3068283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V-PTAT) and a complementary to absolute temperature voltage (V-CTAT), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V-PTAT. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-mu m CMOS process, the sensor has an active area of 0.086 mm(2) and achieves an inaccuracy of +/- 0.54 degrees C (3 sigma) from -40 degrees C to 125 degrees C.

引用

页码：2780 / 2784

页数：5

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