Spin-polarized electron transport and emission from strained superlattices

被引：7
|
作者：
Ambrajei, AN
Clendenin, JE
Egorov, AY
Mamaev, YA
Maruyama, T
Mulhollan, GA
Subashiev, AV
Yashin, YP
Ustinov, VM
Zhukov, AE
机构：
[1] State Tech Univ, St Petersburg 195251, Russia
[2] Stanford Linear Accelerator Ctr, Stanford, CA 94309 USA
[3] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
关键词：
semiconductors; superlattices; electron states (localised); spin dynamics; electron emission spectroscopies;
D O I：
10.1016/S0169-4332(00)00430-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Polarized electron emission from a series of new strained short-period AlInGaAs/AlGaAs superlattices (SLs) is investigated. The In layer content was chosen to give minimal conduction band offset with large strain splitting of the V-band. Simultaneous changing of Al content in both SL layers provides variation of the structure band gap. We demonstrate that tuning of the SL to the excitation energy can be achieved without loss of the electron polarization. The polarization of up to 84% was measured at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：40 / 44
页数：5
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