Symmetric and asymmetric GaAs/Al0.3Ga0.7As double quantum well subjected to hydrostatic pressure and applied electric field

The combined electric field and hydrostatic pressure effects on the binding energy of a shallow-donor impurity in symmetrical and asymmetrical GaAs/Al0.3Ga0.7As double quantum wells are calculated using a variational procedure within the effective-mass approximation. Double quantum wells are examinated considering impurities situated at the well centers. Due to the applied electric field both structures become asymmetric from the impurity potential point of view. According to the dimensions the structures are symmetric (equal well lengths) and asymmetrical (different well lengths). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.