Microdisperse iron silicide structures produced by implantation of iron ions in silicon

被引：0
|
作者：
Dobler, M [1 ]
Reuther, H [1 ]
Moller, W [1 ]
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
来源：
HYPERFINE INTERACTIONS | 1998年 / 112卷 / 1-4期
关键词：
D O I：
10.1023/A:1011029820313
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Iron implanted and subsequently annealed n-type Si(lll) was studied by conversion electron Mossbauer spectroscopy for phase analysis and Auger electron spectroscopy for sputter depth profiling and element mapping. During implantation (200 keV, 3 x 10(17)cm(-2), 350 degrees C) a mixture of beta- and alpha-FeSi2 is firmed and after the subsequent annealing (900 degrees C for 18 h and 1150 degrees C for 1 h) a complete transition to the beta- and the alpha-phase can be detected. The as-implanted profile has Gaussian shape and is broadening during annealing at 900 degrees C to a plateau-like profile and shows only a slight broadening and depth depending fluctuations of the iron concentration after the 1150 degrees C annealing. With scanning Anger electron spectroscopy the lateral iron and silicon distribution were investigated and show for the sample annealed at 900 degrees C large separated beta-FeSi2 precipitates which grow due to the process of Ostwald ripening. At 1150 degrees C additionally coalescence of the precipitates occur and a wide extended penetration alpha-FeSi2 network structure is formed.
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收藏
页码：185 / 188
页数：4
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