Reduction of short channel effects in SOI MOSFETs with 35 nm channel width and 70 nm channel length

被引：2
|
作者：
Leobandung, E [1 ]
Chou, SY [1 ]
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源：
1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST | 1996年
关键词：
D O I：
10.1109/DRC.1996.546334
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：110 / 111
页数：2
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