GeSn Plasmonic Terahertz Photoconductive Antenna

被引:0
|
作者
Chen, Wang-Chien [1 ]
Yang, Shang-Hua [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
关键词
EMISSION; GAAS;
D O I
10.1109/IRMMW-THZ46771.2020.9370674
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a plasmonic terahertz photoconductive antenna (PCA) based on thermal evaporated GeSn photoconductor. This GeSn plasmonic PCA prototype is fabricated through metal-oxide semiconductor (CMOS) compatible processes exhibiting its great potential for cost-effective, massive production. Furthermore, the designed GeSn terahertz emitter can be operated at telecom wavelength, which is well suitable for integrating with fiber-optics and Si photonics platform. Here, we demonstrate that the GeSn based plasmonic PCA performs a broadband spectrum over 2 THz.
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页数:2
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