Electron-beam induced nucleation and growth in amorphous GaAs

被引：0

作者：

Li, ZC ^{[1
]}

Liu, L ^{[1
]}

He, LL ^{[1
]}

Xu, YB ^{[1
]}

机构：

[1] Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

来源：

ACTA METALLURGICA SINICA | 2003年 / 39卷 / 01期

关键词：

amorphous GaAs; electron-beam irradiation; crystallization; in situ observation;

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

In situ observation of electron-beam-irradiation induced crystallization in amorphous GaAs has been performed using high-resolution electron microscopy. The results show that clusters with the size of several atoms formed during the initial irradiation, and crystallization occurred along the clusters. Most of the crystallized grains have the same crystallographic orientation, and the others are twinning with the former. The crystallization rate is closely related to the electron-beam current. The crystallization is contributed to the electron energy rather than the temperature increase induced by electron beam. The mechanism and model for the crystallization induced by irradiation have been discussed.

引用

页码：13 / 16

页数：4

共 15 条

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