Novel microwave plasma-assisted CVD reactor for diamond delta doping

被引：47

作者：

Vikharev, A. L. ^{[1
]}

Gorbachev, A. M. ^{[1
]}

Lobaev, M. A. ^{[1
]}

Muchnikov, A. B. ^{[1
]}

Radishev, D. B. ^{[1
]}

Isaev, V. A. ^{[1
]}

Chernov, V. V. ^{[1
]}

Bogdanov, S. A. ^{[1
]}

Drozdov, M. N. ^{[2
]}

Butler, J. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, 46 Ulyanov St, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, GSP 105, Nizhnii Novgorod 603950, Russia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 04期

关键词：

diamond; single crystals; growth; chemical vapor deposition; reactor; boron; delta doping; secondary ion mass spectroscopy; ION MASS-SPECTROMETRY; DECONVOLUTION; INTERFACES; RESOLUTION; PROFILES; ACCOUNT;

D O I：

10.1002/pssr.201510453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra-sharp interfaces between doped and undoped material and minimize the prolonged "tails" formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer-thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta-layer and multiple delta-layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：324 / 327

页数：4

共 50 条

[1] Microwave engineering of plasma-assisted CVD reactors for diamond deposition
Silva, F.
Hassouni, K.
Bonnin, X.
Gicquel, A.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (36)
[2] Diamond films grown by millimeter wave plasma-assisted CVD reactor
Vikharev, A. L.
Gorbachev, A. M.
Kozlov, A. V.
Koldanov, V. A.
Litvak, A. G.
Ovechkin, N. M.
Radishev, D. B.
Bykov, Yu. V.
Caplan, M.
DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 502 - 507
[3] PREDICTION OF THE FEASIBILITY OF ORIENTED DIAMOND FILMS BY MICROWAVE PLASMA-ASSISTED CVD
BARRAT, S
BAUERGROSSE, E
DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 419 - 424
[4] Nanocrystalline diamond coating of silicon nitride ceramics by microwave plasma-assisted CVD
Amaral, M
Mohasseb, F
Oliveira, FJ
Bénédic, F
Silva, RF
Gicquel, A
THIN SOLID FILMS, 2005, 482 (1-2) : 232 - 236
[5] Low temperature limits of diamond film growth by microwave plasma-assisted CVD
Stiegler, J
Lang, T
NygardFerguson, M
vonKaenel, Y
Blank, E
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 226 - 230
[6] Microwave plasma-assisted etching of diamond
Tran, D. T.
Grotjohn, T. A.
Reinhard, D. K.
Asmussen, J.
DIAMOND AND RELATED MATERIALS, 2008, 17 (4-5) : 717 - 721
[7] The preparation of diamond/tungsten-carbide composite films by microwave plasma-assisted CVD
Samra, Hisham Abit
Hong, Ruijiang
Jiang, Xin
CHEMICAL VAPOR DEPOSITION, 2007, 13 (01) : 17 - +
[8] Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures
Ramamurti, R.
Becker, M.
Schuelke, T.
Grotjohn, T.
Reinhard, D.
Swain, G.
Asmussen, J.
DIAMOND AND RELATED MATERIALS, 2008, 17 (4-5) : 481 - 485
[9] DIAMOND DEPOSITION ON POROUS SILICON BY PLASMA-ASSISTED CVD
SPITZL, R
RAIKO, V
ENGEMANN, J
DIAMOND AND RELATED MATERIALS, 1994, 3 (10) : 1256 - 1261
[10] Microwave plasma-assisted polishing of polycrystalline diamond
Li, Xinyu
Xiao, Yuxi
Wang, Yinhui
He, Quanpeng
Zhang, Yongjie
Deng, Hui
DIAMOND AND RELATED MATERIALS, 2025, 152

← 1 2 3 4 5 →