Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design

被引：12
|
作者：
Wetzel, C
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期
关键词：
GaN; GaInN; piezoelectric effect; electric field; Franz-Keldysh effect; electroreflection;
D O I：
10.1143/JJAP.39.2425
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarization properties of doped Ga0.85In0.15N/GaN multiple quantum well structures are investigated under the application of external bias voltages. From Franz-Keldysh oscillations at and above the barrier band edge, the electric field in the barriers is determined. From the bias dependence, we derive the polarity and an offset of 0.51 MV/cm of the internal field. This is attributed to the piezoelectric polarization in the well region of magnitude P = -e(z) (0.009 - 0.014) C/m(2). We find that Si doping at typical concentrations of 3 x 10(18) cm(-3) cannot screen the polarization effects on the length scale typical for quantum wells and superlattices but induces large potential barriers.
引用
收藏
页码：2425 / 2427
页数：3
相关论文
共 50 条
  • [1] Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design
    Wetzel, Christian
    Amano, Hiroshi
    Akasaki, Isamu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2425 - 2427
  • [2] Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures
    Wetzel, Christian
    Takeuchi, Tetsuya
    Amano, Hiroshi
    Akasaki, Isamu
    Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (2 B):
  • [3] Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures
    Wetzel, C
    Takeuchi, T
    Amano, H
    Akasaki, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B): : L163 - L165
  • [4] Effects of piezoelectric fields in GaInN/GaN and GaN/AlGaN heterostructures and quantum wells
    Im, JS
    Kollmer, H
    Off, J
    Sohmer, A
    Scholz, F
    Hangleiter, A
    NITRIDE SEMICONDUCTORS, 1998, 482 : 513 - 518
  • [5] On the bandstructure in GaInN/GaN heterostructures - Strain, band gap and piezoelectric effect
    Wetzel, C
    Nitta, S
    Takeuchi, T
    Yamaguchi, S
    Amano, H
    Akasaki, L
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (31):
  • [6] Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures
    Wetzel, C
    Takeuchi, T
    Amano, H
    Akasaki, I
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3786 - 3791
  • [7] On the bandstructure in GaInN/GaN heterostructures - Strain, band gap and piezoelectric effect
    Wetzel, Christian
    Nitta, Shugo
    Takeuchi, Tetsuya
    Yamaguchi, Shigeo
    Amano, H.
    Akasaki, I.
    MRS Internet Journal of Nitride Semiconductor Research, 1998, 3
  • [8] Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
    Wetzel, C
    Detchprohm, T
    Takeuchi, T
    Amano, H
    Akasaki, I
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 252 - 255
  • [9] Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
    C. Wetzel
    T. Detchprohm
    T. Takeuchi
    H. Amano
    I. Akasaki
    Journal of Electronic Materials, 2000, 29 : 252 - 255
  • [10] Optical gain in GaInN/GaN heterostructures
    Frankowsky, G
    Steuber, F
    Harle, V
    Scholz, F
    Hangleiter, A
    APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3746 - 3748
12345