Impurity states in a narrow band gap semiconductor quantum dot with parabolic confinement potential

被引：24
|
作者：
Kazaryan, EM [1 ]
Petrosyan, LS [1 ]
Sarkisyan, HA [1 ]
机构：
[1] Yerevan State Univ, Dept Phys, Yerevan 375025, Armenia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 02期
关键词：
parabolic potential; impurity states; quantum dot;
D O I：
10.1016/S1386-9477(02)00662-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Impurity states in a narrow band gap semiconductor quantum dot are studied theoretically. The quantum dot confinement potential is approximated by the three-dimensional spherically symmetric parabolic potential. The electron dispersion law is considered within the framework of two-band Kane model. It is shown that the nonparabolicity leads to the Schroedinger equation with the effective oscillatory potential containing terms proportional to 1/r, r, r(4). Within the framework of the stationary theory of perturbation the energy corrections due to these terms are calculated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：174 / 178
页数：5
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