Symmetry driven control of optical properties in WO3 films

被引:12
|
作者
Herklotz, A. [1 ]
Rus, S. F. [2 ]
Kc, S. [1 ]
Cooper, V. R. [1 ]
Huon, A. [3 ]
Guo, E. -J. [1 ]
Ward, T. Z. [1 ]
机构
[1] Oak Ridge Natl Lab, Bethel Valley Rd, Oak Ridge, TN 37831 USA
[2] Natl Inst Res & Dev Electrochem & Condensed Matte, Renewable Energies Lab Photovolta, Timisoara 300569, Romania
[3] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
来源
APL MATERIALS | 2017年 / 5卷 / 06期
关键词
TUNGSTEN-OXIDE; BAND-GAP; PHOTOCATALYST;
D O I
10.1063/1.4989395
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, we demonstrate that the optical bandgap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. The insertion of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that the optical bandgap is reduced by about 0.18 eV per percent expansion of the out-of-plane unit cell length. Density functional theory calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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页数:7
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