Determination of the carrier concentration in doped n-GaAs layers by Raman and light reflection spectroscopies

被引：3
|
作者：
Avakyants, L. P. [1 ]
Bokov, P. Yu.
Volchkov, N. A.
Kazakov, I. P.
Chervyakov, A. V.
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
OPTICS AND SPECTROSCOPY | 2007年 / 102卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S0030400X07050104
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 10(17)-10(19) cm(-1).
引用
收藏
页码：712 / 716
页数：5
相关论文
共 50 条
  • [1] Determination of the carrier concentration in doped n-GaAs layers by Raman and light reflection spectroscopies
    L. P. Avakyants
    P. Yu. Bokov
    N. A. Volchkov
    I. P. Kazakov
    A. V. Chervyakov
    Optics and Spectroscopy, 2007, 102 : 712 - 716
  • [2] Determination of the charge carrier concentration across growth striations in n-GaAs by Raman spectroscopy
    1600, (71):
  • [3] DETERMINATION OF THE CHARGE CARRIER CONCENTRATION ACROSS GROWTH STRIATIONS IN N-GAAS BY RAMAN-SPECTROSCOPY
    HERMS, M
    IRMER, G
    MONECKE, J
    OETTEL, O
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 432 - 435
  • [4] Determination of electron concentration by IR reflection spectra in n-GaAs samples doped with tellurium and silicon
    Komarovskyi N.Yu.
    Belov A.G.
    Kladova E.I.
    Knyazev S.N.
    Molodtsova E.V.
    Parfenteva I.B.
    Trofimov A.A.
    Applied Physics, 2023, (06): : 54 - 59
  • [5] Study on the carrier concentration in n-GaAs homojunction multilayer structures by reflection spectroscopy
    Zhang, YH
    Sun, JH
    Chen, XY
    Shen, WZ
    PHYSICA B-CONDENSED MATTER, 2004, 348 (1-4) : 329 - 334
  • [6] RAMAN-SCATTERING DETERMINATION OF CARRIER CONCENTRATION AND SURFACE SPACE-CHARGE LAYER IN (100) N-GAAS
    SHEN, H
    POLLAK, FH
    SACKS, RN
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 524 : 145 - 152
  • [7] REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS
    DEAN, RH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1148 - +
  • [8] RAMAN-SCATTERING DETERMINATION OF FREE-CARRIER CONCENTRATION AND SURFACE SPACE-CHARGE LAYER IN (100) N-GAAS
    SHEN, H
    POLLAK, FH
    SACKS, RN
    APPLIED PHYSICS LETTERS, 1985, 47 (08) : 891 - 893
  • [9] FREE CARRIER ABSORPTION IN N-GAAS
    OSAMURA, K
    MURAKAMI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (03) : 365 - +
  • [10] The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors
    Yamada, Hisashi
    Fukuhara, Noboru
    Hata, Masahiko
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5122 - 5124
12345