p-n GaInP2/GaAs tandem solar cells

被引:6
|
作者
Chen, MB [1 ]
Cui, RQ
Wang, LX
Zhang, ZW
Lu, JF
Chi, WY
机构
[1] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China
[2] Shanghai Inst Space Power Sources, Shanghai 200233, Peoples R China
关键词
field-added collection effect; GaInP2; GaAs; tandem solar cells;
D O I
10.7498/aps.53.3632
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper reports the study on p-n GaInP2/GaAs tandem cells. The cell samples were produced by metal-organic chemical vapor deposition at a low gas pressure. In order to optimize the device configuration, numerical modeling has been performed for the impacts of a field-aided collection on the performances of the top cells. On the basis of modeling results, a modified configuration of top cells is introduced, using p(+)-p(-)-n(-)-n(+) structure instead of p(+)-n structure. This modification has brought about much improved photovoltaic performance of the top and tandem cells, with the conversion efficiency Eff = 14.26% and 23.82% (AMO, 25degreesC, 2 x 2cm(2)), respectively.
引用
收藏
页码:3632 / 3636
页数:5
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