Research on Laser Radiation for Simulating Dose Rate Effects in Semiconductor Materials

被引：0
|
作者：
Li, Mo [1 ]
Sun, Peng [1 ]
Zhang, Jian [1 ]
Li, Jie [2 ]
Qi, Chunhua [2 ]
Li, Linzhe [2 ]
Xiao, Liyi [2 ]
机构：
[1] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu, Peoples R China
[2] Harbin Inst Technol, Ctr Microelect, Harbin, Peoples R China
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRONIC INFORMATION AND COMMUNICATION TECHNOLOGY ICEICT 2016 PROCEEDINGS | 2016年
关键词：
laser; gamma; dose-rate effect; radiation; TCAD; ACTIVE CIRCUIT ELEMENTS; PHYSICAL PRINCIPLES; PARAMETERS; MICROCIRCUITS; MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a laser radiation model based on TCAD is built up. With this model, some simulations of laser irradiating semiconductor material are presented. And also simulations of gamma ray irradiating semiconductor material are given. By comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained. The results demonstrate that the laser radiation model is practicable in TCAD for reliability analysis and the laser simulation technique is reliable to simulate dose rate effect.
引用
收藏
页码：540 / 543
页数：4
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