Mechanical failure analysis of thin film transistor devices on steel and polyimide substrates for flexible display applications

被引：19

作者：

Leterrier, Y. ^{[1
]}

Pinyol, A. ^{[1
]}

Gillieron, D. ^{[1
]}

Manson, J. -A. E. ^{[1
]}

Timmermans, P. H. M. ^{[2
]}

Bouten, P. C. P. ^{[3
]}

Templier, F. ^{[4
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Technol Composites & Polymeres LTC, CH-1015 Lausanne, Switzerland

[2] Philips Appl Technol, Syst Package, NL-5656 AE Eindhoven, Netherlands

[3] Philips Res Labs, Photon Mat & Devices, NL-5656 AE Eindhoven, Netherlands

[4] DIHS, CEA LETI Minatec, F-38054 Grenoble, France

来源：

ENGINEERING FRACTURE MECHANICS | 2010年 / 77卷 / 04期

关键词：

Electronics; Thin film transistor; Crack initiation; Steel substrate; Polyimide substrate; CHANNEL-CRACKING; INTEGRITY; COATINGS; ELECTRONICS; ADHESION; STRESSES; STRAIN;

D O I：

10.1016/j.engfracmech.2009.12.016

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and thin polyimide (PI) films was investigated using tensile experiments carried out in situ in an optical microscope. Cracks initiated first within the SiO(2) insulator layer for both types of substrates. The COS was found to be equal to 1.15% and 0.24% for steel and PI, respectively. The influence of loading direction on failure of the TFT stack with anisotropic geometry was moreover found to be considerable, leading to recommendations for backplane design. The large difference in critical strain of the SiO(2) layer on the two substrates was analyzed using an energy release rate approach, and found to result from differences in layer/substrate mechanical contrast and in internal stress state. Based on this analysis a correlation between layer/substrate elastic contrast and tensile failure behavior was devised. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：660 / 670

页数：11

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