Study of SiC device for pulsed power switching circuit

被引：0

作者：

Tagawa, Toru ^{[1
]}

Yamashita, Tomohiko ^{[1
]}

Sakugawa, Takashi ^{[1
]}

Katsuki, Sunao ^{[1
]}

Hukuda, Kenzi ^{[2
]}

Sakamoto, Kunihiro ^{[2
]}

机构：

[1] Kumamoto Univ, Kumamoto, Japan

[2] Natl Inst Adv Ind Sci & Technol, Grad Sch Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

ELECTRICAL ENGINEERING IN JAPAN | 2019年 / 209卷 / 1-2期

基金：

日本学术振兴会;

关键词：

MOSFET; pulsed power; silicon carbide;

D O I：

10.1002/eej.23242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed power generator using semiconductor switches have been developed. We have developed switching module using discrete type Silicon Carbide (SiC) Device for pulsed power circuit. We compare the switching module using SiC-MOSFETs with conventional module using IGBTs. Both of switching devices the switching loss increased when the voltage get higher. The switching module using SiC-MOSFETs can input higher voltage and has less switching loss in same input voltage. Also, we have investigate the switching loss depend on di/dt at switching. The permissible di/dt of SiC-MOSFETs was higher than IGBTs. However, there is a limit to the value of permissible di/dt. The loss in this module is reduced by applying magnetic assist. The advantage of SiC-MOSFET was confirmed in switching for pulsed power.

引用

页码：3 / 9

页数：7

共 50 条

[1] Study of SiC device for pulsed power switching circuit
Tagawa T.
Yamashita T.
Sakugawa T.
Katsuki S.
Hukuda K.
Sakamoto K.
IEEJ Transactions on Fundamentals and Materials, 2019, 139 (08) : 345 - 350
[2] Fast SiC Switching Limits for Pulsed Power Applications
Collier, Landon
Kajiwara, Taiga
Dickens, James
Mankowski, John
Neuber, Andreas
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2019, 47 (12) : 5306 - 5313
[3] Cascode GaN/SiC Power Device for MHz Switching
Xu, Jiale
Gu, Lei
Ye, Zhechi
Kargarrazi, Saleh
Rivas-Davila, Juan
THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 2780 - 2785
[4] Simulation analysis of pulsed power switching circuit in laser power supply
Li, Hua
Lin, Juping
Li, Zhiwei
Lin, Fuchang
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2013, 25 (07): : 1873 - 1876
[5] Low Inductance Switching for SiC MOSFET Based Power Circuit
Shelton, Edward
Zhang, Xueqiang
Zhang, Tianqi
Hari, Nikita
Palmer, Patrick
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 5093 - 5100
[6] Application of Pspice subcircuit to circuit simulation of pulsed power device
Lai, Dingguo
Xie, Linshen
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2012, 24 (03): : 689 - 692
[7] Inductively coupled plasma etching of SiC for power switching device fabrication
Cao, L
Li, B
Zhao, JH
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 833 - 836
[8] A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters
Ho, Carl N. M.
Canales, Francisco
Coccia, Antonio
Laitinen, Matti
2008 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, VOLS 1-5, 2008, : 364 - +
[9] Analog CMOS Pulsed-Coupled Neuron Circuit with Multipath-Switching Device
Han, Wei-Hua
Xiong, Ying
Zhao, Kai
Zhang, Yan-Bo
Yang, Fu-Hua
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 1336 - 1338
[10] Research on Switching Characteristics of SiC MOSFET in Pulsed Power Supply with Analytical Model
Ma, Zaojun
Pei, Yunqing
Wang, Laili
Yang, Qingshou
Lu, Xiaohui
Yang, Fengtao
2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA), 2021, : 325 - 330

← 1 2 3 4 5 →